By Richard Razgaitis
Commercializing expertise inno-vation is not any secure trip. yet as expertise licensing specialist Richard Razgaitis completely explains, by means of employing reasoned judgment and confirmed techniques, tools, and instruments, you could profitably achieve risk–based chance. crucial interpreting for licensing executives, M&A dealmakers, expertise startups, and highbrow estate specialists and legal professionals, Valuation and Dealmaking of Technology-Based highbrow estate indicates you how.
This new book—a thoroughly revised and extended version of Razgaitis's earlier booklet Valuation and Pricing of Technology-Based highbrow Property—brings jointly fabric distinctive as "Approaches" into 3 center know-how enterprise strategies used for reworking know-how into funds: chance Discovery, Valuation, and Dealmaking, or the acronym D-V-D. furthermore, this publication introduces, develops, and applies the next six valuation methods:
Use of criteria for Valuation
The Rating/Ranking technique, and Tool
ideas of Thumb to figure out Valuation
Discounted funds circulate solution to verify Valuation
complex Valuation Methods
Valuation through Auctions
The use of Monte Carlo as a sophisticated Valuation technique has additionally been increased during this re-creation and an accompanying site, www.razgaitis.com, presents spreadsheets utilized in this ebook in addition to a hyperlink to a unfastened trial of the Monte Carlo software program to permit pros to run their very own simulations.
Guiding licensing executives via world-class thoughts on easy methods to remodel a expertise chance right into a reason-based valuation and consummated license/sale, Valuation and Dealmaking of Technology-Based highbrow estate offers the serious tips licensing execs desire.
Read or Download Valuation and Dealmaking of Technology-Based Intellectual Property: Principles, Methods and Tools (2nd Edition) PDF
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Additional resources for Valuation and Dealmaking of Technology-Based Intellectual Property: Principles, Methods and Tools (2nd Edition)
Further improvement in control of short channel effects in the 22 nm node and beyond CMOS transistors would likely not come from reduction in the EOT of the high-k dielectric and the metal gate stack due to reliability constraints. Moreover, due to explosive growth in the mobile computing market stemming from the widespread adoption of the smartphones and tablets, the industry felt there is an urgent need for next-generation nanoscale transistors to be “energy efficient,” which implies that they should operate with the lowest switching power (also called the dynamic power) and the lowest off-state leakage power (also called the stand-by power).
Having already harnessed the benefits of key transistor innovations such as the highly strained-Si channels [2,3] for mobility enhancement and the high-k/metal-gate stacks [4,5] for higher drive current and lower gate leakage, the advanced transistor research community accelerated the research on the nonplanar multiple gate CMOS transistor architecture such as Tri-gate transistors [6,7]. The fundamental motivation behind adoption of Tri-gate transistors is that a combination of multiple gates and thin body channel would enable FD transistor operation at reduced channel lengths and maintain well-tempered transistor behavior with well-controlled short channel effects at the 22 nm node and beyond.
Phys Rev B 1994;50:7615–7625. 81. Usuki T, Saito M, Takatsu M, Kiehl RA, Yokoyama N. Numerical analysis of ballisticelectron transport in magnetic fields by using a quantum point contact and a quantum wire. Phys Rev B 1995;52:8244–8255. Akis R, Ferry DK, Bird JP. Magnetotransport fluctuations in regular semiconductor ballistic quantum dots. Phys Rev B 1996;54:17705–17715. 83. Akis R, Gilbert M, Ferry DK. Fully quantum mechanical simulations of gated silicon quantum wire structures: Investigating the effects of changing cross-section on transport.